晶体管元件查询
型号:2SK1100
类型:N沟道场效应管
耗散功率(PD):0.2 W
漏极电流(ID):0.06 A
漏极和源极电压(VDSS):4 V
封装:4-218
更多N沟道场效应管IPB120N06S4-H1(4N06H1)IRFUC20IXFH7N8010N60CIRC150IXTA80N10TSTD13N60M2DHE85N082SK1388B3020LUV9806K8N60H12N65FTD09N03NLSE55R140GT
更多N沟道场效应管IPB120N06S4-H1(4N06H1)IRFUC20IXFH7N8010N60CIRC150IXTA80N10TSTD13N60M2DHE85N082SK1388B3020LUV9806K8N60H12N65FTD09N03NLSE55R140GT