晶体管元件查询
型号:HY5012W
类型:N沟道场效应管
耗散功率(PD):500 W
漏极电流(ID):
【管壳温度(Tc)=25 ℃】300 A
【管壳温度(Tc)=25 ℃】300 A
漏极和源极电压(VDSS):125 V
漏极和源极通态电阻(RDS(on)):0.0036 Ω
封装:TO-247
更多N沟道场效应管TK110Z65Z2SK8722SK609IRF221MDF7N60BIRFG110LSGG04R028STB12NM50NFTB85N12IXTR30N25OR8090IRCP054LSD65R180GFSTI20N65M5BUZ11