晶体管元件查询
型号:TK11P65W
类型:N沟道场效应管
耗散功率(PD):
【管壳温度(Tc)=25 ℃】100 W
【管壳温度(Tc)=25 ℃】100 W
漏极电流(ID):11.1 A
漏极和源极电压(VDSS):650 V
漏极和源极通态电阻(RDS(on)):0.44 Ω
封装:DPAK
更多N沟道场效应管UV4504R2SK168IRFK3D450SPA03N60C3LSG65R930GT2SK3592SK3982-01MRIRFZ48DH3278NP32N055HHE2SK3639BUZ93LSH60R950HT2SK2542SUP57N20