晶体管元件查询
型号:HYG011N04LS1C2
类型:N沟道场效应管
耗散功率(PD):
【管壳温度(Tc)=25 ℃】75 W
【管壳温度(Tc)=25 ℃】75 W
漏极电流(ID):
【管壳温度(Tc)=25 ℃】165 A
【管壳温度(Tc)=25 ℃】165 A
漏极和源极电压(VDSS):40 V
漏极和源极通态电阻(RDS(on)):0.0014 Ω
封装:DFN5X6-8L
更多N沟道场效应管2SK1415AOTF9N70IRFAE42IXFH7N80STF11N60M2-EP(11N60M2EP)HX2N60NVMYS7D3N04CLIRFJ422SSS6N60FH6880ATK20J60WSGT210N60SJIRFU210IRF713IRF341