晶体管元件查询
型号:P20N60TD2
类型:N沟道场效应管
耗散功率(PD):
【管壳温度(Tc)=25 ℃】150 W
【管壳温度(Tc)=25 ℃】150 W
漏极电流(ID):
【管壳温度(Tc)=25 ℃】20 A
【管壳温度(Tc)=25 ℃】20 A
漏极和源极电压(VDSS):600 V
漏极和源极通态电阻(RDS(on)):0.19 Ω
封装:TO-220
更多N沟道场效应管IRF323IRFK6J150NE345L-10BDHI3205TSGB450N50W3FLM3742-14/DFSS2300SUP85N10-10PIRF733SLP13N50AFHF540SST65R650S22SK3595K10A60WIRC634