Transistor element query
Part Number:3DA1C
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):7.5 W
Collector maximum allowable current (ICM):1 A
Collector-base breakdown voltage (BVCBO):70 V
Collector-emitter breakdown voltage (BVCEO):60 V
Collector-emitter leakage current (ICEO):200 μA
Transition frequency (fT):100 MHz
DC current gain (hFE):≥15
chip material:Silicon
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