Transistor element query
Part Number:3DD03C
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):50 W
Collector maximum allowable current (ICM):5 A
Collector-base breakdown voltage (BVCBO):250 V
Collector-emitter breakdown voltage (BVCEO):200 V
Collector cut-off current (ICBO):1000 μA
Collector-emitter leakage current (ICEO):2000 μA
Transition frequency (fT):1 MHz
DC current gain (hFE):≥20
chip material:Silicon
More NPN Transistor2SC47453DD102B3DD13A3DD15E2SD8223DD12A3DD62A3DD6C3DD15B3DD63C2SC5132BU1173D15D2SD35053DD12E