Transistor element query
Part Number:3DG4B
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):0.3 W
Collector maximum allowable current (ICM):0.05 A
Collector-base breakdown voltage (BVCBO):20 V
Collector-emitter breakdown voltage (BVCEO):15 V
Collector cut-off current (ICBO):0.1 μA
Collector-emitter leakage current (ICEO):0.1 μA
Transition frequency (fT):150 MHz
DC current gain (hFE):≥30
chip material:Silicon
More NPN Transistor3DG161JSE60013DG161A3DK28B3DG81BBSJ793DX200B3DG111B3DG5C2N35683DK102A3BX85C3DG110B2SC538A3DG44B