Transistor element query
Part Number:3DK101A
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):0.2 W
Collector maximum allowable current (ICM):0.04 A
Collector-base breakdown voltage (BVCBO):20 V
Collector-emitter breakdown voltage (BVCEO):15 V
Emitter-base breakdown voltage (BVEBO):4 V
Collector-emitter leakage current (ICEO):0.1 μA
Emitter cut-off current (IEBO):0.1 μA
Transition frequency (fT):300 MHz
DC current gain (hFE):25~180
chip material:Silicon
More NPN Transistor2SC2377C3DK62CCDQ10023CDQ10018SE10013DG1A3BX2A3DK2ACDQ100263BX2B3BX81B2N542MSC2295BT32N51333BX81A