Transistor element query
Part Number:4S11B
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):40 W
Collector maximum allowable current (ICM):5 A
Collector-base breakdown voltage (BVCBO):80 V
Collector-emitter breakdown voltage (BVCEO):70 V
Collector-emitter leakage current (ICEO):1000 μA
Transition frequency (fT):80 MHz
DC current gain (hFE):≥15
chip material:Silicon
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