Transistor element query
Part Number:H7N1004DS
Part Type:N-Channel FET
Power Dissipation (PD):
[Case temperature (Tc) = 25 â]30 W
[Case temperature (Tc) = 25 â]30 W
Drain current (ID):
[Ambient temperature (Ta) = 25 â]25 A
[Ambient temperature (Ta) = 25 â]25 A
Drain-source voltage (VDSS):100 V
Drain-source on resistance (RDS(on)):0.035 Ω
Package:DPAK
More N-Channel FETFQA8N100CHY4008PRF1S70N06SMLNH045R140LNE06R062CEB85N75BSH103APT17N80IXFH7N90SGD1K4N65W3HYG028N10NS1P(G028N10)MGF4301ASVF6N60FQIRFB5615PbF2SK955