Transistor element query
Part Number:HY3208
Part Type:N-Channel FET
Power Dissipation (PD):227 W
Drain current (ID):
[Case temperature (Tc) = 25 ℃]120 A
[Case temperature (Tc) = 25 ℃]120 A
Drain-source voltage (VDSS):80 V
Drain-source on resistance (RDS(on)):0.007 Ω
Package:TO-3P
More N-Channel FET2SK796FHP540WMK14N65C2IRFU422IXFH7N90DHE200N08SGT650N80W3IXTH9N100HY3008K15J50DLNH045R140SVF4N65IRFZ44LND5N65B2SK1884