Transistor element query
Part Number:IPP200N25N3G(200N25N)
Part Type:N-Channel FET
Power Dissipation (PD):
[Case temperature (Tc) = 25 â]300 W
[Case temperature (Tc) = 25 â]300 W
Drain current (ID):
[Case temperature (Tc) = 25 â]64 A
[Case temperature (Tc) = 25 â]64 A
Drain-source voltage (VDSS):250 V
Drain-source on resistance (RDS(on)):0.02 Ω
Package:TO-220
More N-Channel FETHY3403BLSB65R099GFIRF220IPB072N15N3GIRFR420AOD5N40MGFX38V9095FTP16N06BLSE65R570GTBR4N603SK191FNK01N15DSPP03N60C3LSGC04R0352SK2995