Transistor element query
Part Number:LSGE10R080W3
Part Type:N-Channel FET
Power Dissipation (PD):150 W
Drain current (ID):
[Case temperature (Tc) = 25 ℃]80 A
[Case temperature (Tc) = 25 ℃]80 A
Drain-source voltage (VDSS):100 V
Drain-source on resistance (RDS(on)):0.008 Ω
Package:TO-263
More N-Channel FET2SK2730FLM7177-4C/DHYG028N10NS1P(G028N10)FTA04N65CBUK9540-100AIRFIZ34HY3410PIRFK2D2502SK1357SVG095R0NS80R900SVF10N65MDU1517LNH4N65DHI130N03