晶体管元件查询
型号:SWI6N60(SW6N60)
类型:N沟道场效应管
耗散功率(PD):
【管壳温度(Tc)=25 ℃】24 W
【管壳温度(Tc)=25 ℃】24 W
漏极电流(ID):
【管壳温度(Tc)=25 ℃】6 A
【管壳温度(Tc)=25 ℃】6 A
漏极和源极电压(VDSS):600 V
漏极和源极通态电阻(RDS(on)):1.5 Ω
封装:TO-251
更多N沟道场效应管DH100N03IRFI640SGT190N65SJSGT380N65SJ2SK18842SK2542FHR10XCSD30N40STF32N65M5HY1001BLSDN60R950HTOR01H18A4N65TIRFZ46NPBFIRCP054