晶体管元件查询
型号:TSP8N60M
类型:N沟道场效应管
耗散功率(PD):
【管壳温度(Tc)=25 ℃】152 W
【管壳温度(Tc)=25 ℃】152 W
漏极电流(ID):
【管壳温度(Tc)=25 ℃】7.5 A
【管壳温度(Tc)=25 ℃】7.5 A
漏极和源极电压(VDSS):600 V
漏极和源极通态电阻(RDS(on)):1.2 Ω
封装:TO-220
更多N沟道场效应管IRF433IRFK6H4502SK2078CS48N88IRF842SPW35N60C32SK2674FQPF7N80CTK13A65UIPS65R600E6(65E6600)LNG05R100STY139N65M5MGF1414SUB85N03-04PNCE80H15