Transistor element query
Part Number:HY1001B
Part Type:N-Channel FET
Power Dissipation (PD):
[Case temperature (Tc) = 25 ℃]115 W
[Case temperature (Tc) = 25 ℃]115 W
Drain current (ID):80 A
Drain-source voltage (VDSS):70 V
Drain-source on resistance (RDS(on)):0.0085 Ω
Package:TO-263
More N-Channel FETIRFAG30SVD13N50TS80N08ROR70802SK702SK14072SK31422SK2996SVT078R0NSOR01H12IRF152MTM4N502SK1237APM2510NNEZ1011-2A