Transistor element query
Part Number:HYG035N10NS2B
Part Type:N-Channel FET
Power Dissipation (PD):
[Case temperature (Tc) = 25 â]220 W
[Case temperature (Tc) = 25 â]220 W
Drain current (ID):
[Case temperature (Tc) = 25 â]180 A
[Case temperature (Tc) = 25 â]180 A
Drain-source voltage (VDSS):100 V
Drain-source on resistance (RDS(on)):0.004 Ω
Package:TO-263
More N-Channel FETAO4402MDF15N60GBUZ3452SK2545LND18N50DHB070N06IRF1404ZPbFDH140N09LSC65R180GTIRFIP2442SK3530NCE65R260DIRFK2D150SPI12N50C3IPP60R280E6(6R280E6)