晶体管元件查询
型号:FQD19N10
类型:N沟道场效应管
耗散功率(PD):50 W
漏极电流(ID):
【管壳温度(Tc)=25 ℃】15.6 A
【管壳温度(Tc)=25 ℃】15.6 A
漏极和源极电压(VDSS):100 V
漏极和源极通态电阻(RDS(on)):0.1 Ω
封装:D-PAK
更多N沟道场效应管IRF200P222IRFR224IXTH6N803SK140IRFM2502SK406DHB90N035R2SK2083NCEP039N10DHY5204AFLK052WGBUK457-500B2SK83FLM1011-2LSB65R125HT