晶体管元件查询
型号:IXFN200N06
类型:N沟道场效应管
耗散功率(PD):
【管壳温度(Tc)=25 ℃】520 W
【管壳温度(Tc)=25 ℃】520 W
漏极电流(ID):
【管壳温度(Tc)=25 ℃】200 A
【管壳温度(Tc)=25 ℃】200 A
漏极和源极电压(VDSS):60 V
漏极和源极通态电阻(RDS(on)):0.006 Ω
封装:SOT-227B
更多N沟道场效应管04N03HYG028N10NS1B(G028N10)FBM85N802SK2848CS30N25A8RNEZ1011-6ANEZ0910-4AIRFP153IRF254FHP540IRFJ423IXFH1N80FLM1414-2TK25Z60XIRF1310NLPbF