晶体管元件查询
型号:IXTP50N25T
类型:N沟道场效应管
耗散功率(PD):
【管壳温度(Tc)=25 ℃】400 W
【管壳温度(Tc)=25 ℃】400 W
漏极电流(ID):
【管壳温度(Tc)=25 ℃】50 A
【管壳温度(Tc)=25 ℃】50 A
漏极和源极电压(VDSS):250 V
漏极和源极通态电阻(RDS(on)):0.06 Ω
封装:TO-220AB![](images/TO-220ABgds.gif)
![](images/TO-220ABgds.gif)
更多N沟道场效应管MTW32N20EIRC531IRFP4710SGF360N60W3IXTH6N90HF5N65TK18A50DOSP8N60CAPT26F120L2SK2654IRFS4710PbFSUP70N03-09BPNE32183A2SK1383SVF7N65CMJL