晶体管元件查询
型号:MTP4N50
类型:N沟道场效应管
耗散功率(PD):75 W
漏极电流(ID):
【管壳温度(Tc)=25 ℃】4 A
【管壳温度(Tc)=25 ℃】4 A
漏极和源极电压(VDSS):500 V
漏极和源极通态电阻(RDS(on)):1.5 Ω
封装:TO-220AB
更多N沟道场效应管DHE100N06IRFK2DC50FK20SM-10SUD35N05-26LD8507NXWMK14N65C2IXTH6N902SK852N6796IRFZ12MTP7N20FDH055N15ATF060N03MFTD36N06NIRF543