晶体管元件查询
型号:OSF8N60C
类型:N沟道场效应管
耗散功率(PD):
【管壳温度(Tc)=25 ℃】50 W
【管壳温度(Tc)=25 ℃】50 W
漏极电流(ID):
【管壳温度(Tc)=25 ℃】7.5 A
【管壳温度(Tc)=25 ℃】7.5 A
漏极和源极电压(VDSS):600 V
漏极和源极通态电阻(RDS(on)):1.2 Ω
封装:TO-220F
更多N沟道场效应管WFW20N60FHP8N6085N08PIRF143STP14NK50ZMGF1304A2SK3101LSDHD100N03FDB024N04AL7AO4430DHI85N08FLM7177-4C/DSGF160N60W3TTP115N08AIRF441