Transistor element query
Part Number:2N3583
Part Type:NPN Transistor
Total Device Dissipation (Ptot):35 W
Collector current (IC):2 A
Collector-base voltage (VCBO):250 V
Collector-emitter voltage (VCEO):175 V
Emitter-base voltage (VEBO):6 V
Collector-emitter leakage current (ICEO):10000 μA
Emitter cut-off current (IEBO):5000 μA
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = 1 A]5 V
[Collector current (Ic) = 1 A]5 V
Transition frequency (fT):10 MHz
DC current gain (hFE):40~200
chip material:Silicon
Remark:Complementary to 2N6420
Package:TO-66
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