Transistor element query
Part Number:2N6058
Part Type:Damped NPN Darlington Transistor
Collector power dissipation (PC):150 W
Collector current (IC):12 A
Collector-base voltage (VCBO):80 V
Collector-emitter voltage (VCEO):80 V
Emitter-base voltage (VEBO):5 V
Collector-emitter leakage current (ICEO):1000 μA
Emitter cut-off current (IEBO):2000 μA
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = 12 A]3 V
[Collector current (Ic) = 12 A]3 V
Transition frequency (fT):4 MHz
DC current gain (hFE):750~18000
chip material:Silicon
Package:TO-3
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