Transistor element query
Part Number:2N6517
Part Type:NPN Transistor
Power Dissipation (PD):
[Ambient temperature (Ta) = 25 ℃]0.625 W
[Ambient temperature (Ta) = 25 ℃]0.625 W
Collector current (IC):0.5 A
Collector-base voltage (VCBO):350 V
Collector-emitter voltage (VCEO):350 V
Emitter-base voltage (VEBO):6 V
Collector cut-off current (ICBO):0.05 μA
Emitter cut-off current (IEBO):0.05 μA
Transition frequency (fT):40 MHz
DC current gain (hFE):30~200
chip material:Silicon
Remark:Complementary to 2N6520
Package:TO-92
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