Transistor element query
Part Number:2SB527
Part Type:PNP Transistor
Collector power dissipation (PC):
[Collector temperature (Tc) = 25 ℃]10 W
[Collector temperature (Tc) = 25 ℃]10 W
Collector current (IC):0.8 A
Collector-base voltage (VCBO):110 V
Collector-emitter voltage (VCEO):100 V
Emitter-base voltage (VEBO):5 V
Collector cut-off current (ICBO):10 μA
Collector-emitter leakage current (ICEO):1000 μA
Emitter cut-off current (IEBO):10 μA
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = 0.3 A]1 V
[Collector current (Ic) = 0.3 A]1 V
Transition frequency (fT):70 MHz
DC current gain (hFE):55~300
chip material:Silicon
Remark:Complementary to 2SD357
Package:TO-220C
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