Transistor element query
Part Number:2SB681
Part Type:PNP Transistor
Collector power dissipation (PC):
[Collector temperature (Tc) = 25 ℃]100 W
[Collector temperature (Tc) = 25 ℃]100 W
Collector current (IC):
[Ambient temperature (Ta) = 25 ℃]12 A
[Ambient temperature (Ta) = 25 ℃]12 A
Collector-base voltage (VCBO):150 V
Collector-emitter voltage (VCEO):150 V
Emitter-base voltage (VEBO):6 V
Collector-emitter leakage current (ICEO):100 μA
Emitter cut-off current (IEBO):100 μA
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = 6 A]2.5 V
[Collector current (Ic) = 6 A]2.5 V
Transition frequency (fT):13 MHz
DC current gain (hFE):40~140
chip material:Silicon
Package:TO-3
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