Transistor element query
Part Number:2SD1051
Part Type:NPN Transistor
Total Device Dissipation (Ptot):
[Ambient temperature (Ta) = 25 ℃]1 W
[Ambient temperature (Ta) = 25 ℃]1 W
Collector current (IC):1.5 A
Collector-base voltage (VCBO):50 V
Collector-emitter voltage (VCEO):40 V
Emitter-base voltage (VEBO):5 V
Collector cut-off current (ICBO):1 μA
Collector-emitter leakage current (ICEO):100 μA
Emitter cut-off current (IEBO):10 μA
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = 1.5 A]1 V
[Collector current (Ic) = 1.5 A]1 V
Transition frequency (fT):150 MHz
DC current gain (hFE):80~220
chip material:Silicon
Remark:Complementary to 2SB819
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