Transistor element query
Part Number:2SD1189
Part Type:NPN Transistor
Collector power dissipation (PC):
[Collector temperature (Tc) = 25 ℃]5 W
[Collector temperature (Tc) = 25 ℃]5 W
Collector current (IC):2 A
Collector-base voltage (VCBO):40 V
Collector-emitter voltage (VCEO):32 V
Emitter-base voltage (VEBO):5 V
Collector cut-off current (ICBO):1 μA
Emitter cut-off current (IEBO):1 μA
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = 2 A]0.8 V
[Collector current (Ic) = 2 A]0.8 V
Transition frequency (fT):100 MHz
DC current gain (hFE):82~390
chip material:Silicon
Remark:Complementary to 2SB891
Package:TO-126F
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