Transistor element query
Part Number:3DA150C
Part Type:NPN Transistor
Total Device Dissipation (Ptot):
[Case temperature (Tc) = 70 ℃]1 W
[Case temperature (Tc) = 70 ℃]1 W
Collector maximum allowable current (ICM):0.1 A
Collector-base breakdown voltage (BVCBO):200 V
Collector-emitter breakdown voltage (BVCEO):200 V
Emitter-base breakdown voltage (BVEBO):5 V
Collector cut-off current (ICBO):1 μA
Collector-emitter leakage current (ICEO):5 μA
Emitter cut-off current (IEBO):5 μA
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = 0.05 A]1 V
[Collector current (Ic) = 0.05 A]1 V
Transition frequency (fT):50 MHz
DC current gain (hFE):≥30
Package:TO-39
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