Transistor element query
Part Number:3DA32B
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):4 W
Collector maximum allowable current (ICM):0.4 A
Collector-base breakdown voltage (BVCBO):60 V
Collector-emitter breakdown voltage (BVCEO):40 V
Emitter-base breakdown voltage (BVEBO):4 V
Collector-emitter leakage current (ICEO):300 μA
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = 0.2 A]1 V
[Collector current (Ic) = 0.2 A]1 V
Transition frequency (fT):600 MHz
DC current gain (hFE):≥10
Package:G-1