Transistor element query
Part Number:3DA58H
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):50 W
Collector maximum allowable current (ICM):3 A
Collector-base breakdown voltage (BVCBO):1400 V
Collector-emitter breakdown voltage (BVCEO):600 V
Collector cut-off current (ICBO):300 μA
DC current gain (hFE):7～30
chip material:Silicon
More NPN Transistor3DA58A2SD2027BR300B3DD102D2SC9353DD62E3DD202A3DA50G3DD15ABR400A2SD898B2SC3883BR300A3DD12A3DA58I