Transistor element query
Part Number:3DD102E
Part Type:NPN Transistor
Collector power dissipation (PC):2 W
Collector Maximum Dissipated Power (PCM):50 W
Collector maximum allowable current (ICM):5 A
Collector-base breakdown voltage (BVCBO):350 V
Collector-emitter breakdown voltage (BVCEO):300 V
Emitter-base breakdown voltage (BVEBO):4 V
Collector cut-off current (ICBO):1000 μA
Collector-emitter leakage current (ICEO):2000 μA
Transition frequency (fT):1 MHz
DC current gain (hFE):>20
chip material:Silicon
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