Transistor element query
Part Number:3DD13007
Part Type:NPN Transistor
Collector-base voltage (VCBO):700 V
Collector-emitter voltage (VCEO):400 V
Emitter-base voltage (VEBO):9 V
Collector cut-off current (ICBO):1000 μA
Collector-emitter leakage current (ICEO):100 μA
Transition frequency (fT):4 MHz
DC current gain (hFE):5~40
chip material:Silicon
Package:TO-220
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