Transistor element query
Part Number:3DD167E
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):150 W
Collector current (IC):15 A
Collector-base breakdown voltage (BVCBO):350 V
Collector-emitter breakdown voltage (BVCEO):250 V
Emitter-base breakdown voltage (BVEBO):5 V
Collector-emitter leakage current (ICEO):2000 μA
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = 7.5 A]1.5 V
[Collector current (Ic) = 7.5 A]1.5 V
Transition frequency (fT):1 MHz
DC current gain (hFE):15~270
Package:F-2
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