Transistor element query
Part Number:3DD170D
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):200 W
Collector current (IC):
[Collector temperature (Tc) = 75 ℃]20 A
[Collector temperature (Tc) = 75 ℃]20 A
Collector-base voltage (VCBO):250 V
Collector-emitter voltage (VCEO):200 V
Emitter-base voltage (VEBO):5 V
Collector-emitter leakage current (ICEO):3000 μA
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = 10 A]1.8 V
[Collector current (Ic) = 10 A]1.8 V
Transition frequency (fT):1 MHz
DC current gain (hFE):15~270
Package:F-3![](/jingtiguan/images/F-3.gif)
![](/jingtiguan/images/F-3.gif)
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