Transistor element query
Part Number:3DD2102
Part Type:Damped NPN Transistor
Collector power dissipation (PC):
[Collector temperature (Tc) = 25 ℃]50 W
[Collector temperature (Tc) = 25 ℃]50 W
Collector current (IC):6 A
Collector-base breakdown voltage (BVCBO):1500 V
Collector-emitter breakdown voltage (BVCEO):600 V
Emitter-base breakdown voltage (BVEBO):6 V
Collector cut-off current (ICBO):1000 μA
Emitter cut-off current (IEBO):200000 μA
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = 4 A]5 V
[Collector current (Ic) = 4 A]5 V
Transition frequency (fT):1 MHz
DC current gain (hFE):8~30
Package:TO-3PHIS
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