Transistor element query
Part Number:3DD5011
Part Type:NPN Transistor
Collector power dissipation (PC):50 W
Collector current (IC):
[Collector temperature (Tc) = 25 ℃]10 A
[Collector temperature (Tc) = 25 ℃]10 A
Collector-base breakdown voltage (BVCBO):900 V
Collector-emitter breakdown voltage (BVCEO):600 V
Emitter-base breakdown voltage (BVEBO):6 V
Collector cut-off current (ICBO):1000 μA
Emitter cut-off current (IEBO):10 μA
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = 3 A]0.5 V
[Collector current (Ic) = 3 A]0.5 V
Transition frequency (fT):1.7 MHz
DC current gain (hFE):20~35
Package:TO-3P(H)ISISbce.gif)
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