Transistor element query
Part Number:3DD50C
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):1 W
Collector maximum allowable current (ICM):1 A
Collector-emitter breakdown voltage (BVCEO):80 V
Emitter-base breakdown voltage (BVEBO):3 V
Collector-emitter leakage current (ICEO):400 μA
DC current gain (hFE):≥10
More NPN TransistorCDQ100123DG84H2SD19942SD668BD150A3DD52C2N3734BSR422SD7763DG84ECDQ100112SD19813DD51A3DG84C2N4927