Transistor element query
Part Number:3DD65B
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):75 W
Collector maximum allowable current (ICM):10 A
Collector-emitter breakdown voltage (BVCEO):50 V
Emitter-base breakdown voltage (BVEBO):3 V
Collector-emitter leakage current (ICEO):3000 μA
DC current gain (hFE):≥10
Package:G-3
More NPN TransistorDTS4133DD162BRCA1C073DD162D3DD162ERCA30553DD162G3DD163B3DD163C3DD162F3DD66D3DD66E3DD65D3DD163A2N1702