Transistor element query
Part Number:3DG101D
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):0.1 W
Collector maximum allowable current (ICM):0.02 A
Collector-base breakdown voltage (BVCBO):50 V
Collector-emitter breakdown voltage (BVCEO):40 V
Emitter-base breakdown voltage (BVEBO):4 V
Collector cut-off current (ICBO):0.03 μA
Collector-emitter leakage current (ICEO):0.05 μA
Emitter cut-off current (IEBO):0.01 μA
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = 0.01 A]0.35 V
[Collector current (Ic) = 0.01 A]0.35 V
Transition frequency (fT):150 MHz
DC current gain (hFE):30~270
chip material:Silicon
More NPN Transistor2G910C3DG103A2SC5353DG203C3DG6C3DG200A3DG100A3DG56B3DG19E3DG103C3DK3B3DK5A3DG1422SC16743DG203B