Transistor element query
Part Number:3DG12B
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):0.7 W
Collector maximum allowable current (ICM):0.3 A
Collector-base breakdown voltage (BVCBO):60 V
Collector-emitter breakdown voltage (BVCEO):45 V
Transition frequency (fT):150 MHz
DC current gain (hFE):30~270
chip material:Silicon
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