Transistor element query
Part Number:3DG161N
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):0.3 W
Collector maximum allowable current (ICM):0.02 A
Collector-base breakdown voltage (BVCBO):300 V
Collector-emitter breakdown voltage (BVCEO):300 V
Collector cut-off current (ICBO):0.1 μA
Collector-emitter leakage current (ICEO):0.1 μA
Transition frequency (fT):100 MHz
DC current gain (hFE):≥20
chip material:Silicon
More NPN Transistor3DK102A3DG111A2SC2216BC414BP3DG44B3DX1073DG9D3DK28A3DG161MSCA453DK7B3DG5BBSS383DX200B3DG32A