Transistor element query
Part Number:3DG6A
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):0.1 W
Collector maximum allowable current (ICM):0.02 A
Collector-base breakdown voltage (BVCBO):20 V
Collector-emitter breakdown voltage (BVCEO):15 V
Transition frequency (fT):150 MHz
DC current gain (hFE):30~270
chip material:Silicon
More NPN Transistor3DG203B3DG104CTF3023DG140C3DG100A3DG103D3DK5A3DG104B3DG11B3DG100C3DG102A3DG103A3DG202C3DG19B3DK3A