Transistor element query
Part Number:3DG8A
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):0.3 W
Collector maximum allowable current (ICM):0.05 A
Collector-base breakdown voltage (BVCBO):20 V
Collector-emitter breakdown voltage (BVCEO):15 V
Collector cut-off current (ICBO):0.1 μA
Collector-emitter leakage current (ICEO):0.1 μA
Transition frequency (fT):150 MHz
DC current gain (hFE):≥30
chip material:Silicon
More NPN Transistor3DG161B3DG37A2N35683DG37D3DG131F3DG161M3DG4083DX1043DG44C3DG9C3DK28CAD8133DG5E2SC7613DG402