Transistor element query
Part Number:BC636
Part Type:PNP Transistor
Power Dissipation (PD):
[Ambient temperature (Ta) = 25 ℃]1 W
[Ambient temperature (Ta) = 25 ℃]1 W
Collector current (IC):1 A
Collector-base voltage (VCBO):45 V
Collector-emitter voltage (VCEO):45 V
Emitter-base voltage (VEBO):5 V
Collector cut-off current (ICBO):0.1 μA
Emitter cut-off current (IEBO):10 μA
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = 0.5 A]0.5 V
[Collector current (Ic) = 0.5 A]0.5 V
Transition frequency (fT):100 MHz
DC current gain (hFE):40~250
Remark:Complementary to BC635
Package:TO-92
More PNP Transistor2SA14292SA14132SB14592N20002N4900NTE129BFR79BFT792SA815BD830B6472SA2070TIP30B2SB15192SB324