Transistor element query
Part Number:BD941
Part Type:NPN Transistor
Collector power dissipation (PC):
[Collector temperature (Tc) = 25 ℃]30 W
[Collector temperature (Tc) = 25 ℃]30 W
Collector current (IC):3 A
Collector maximum allowable current (ICM):7 A
Collector-base voltage (VCBO):140 V
Collector-emitter voltage (VCEO):140 V
Emitter-base voltage (VEBO):5 V
Collector cut-off current (ICBO):50 μA
Collector-emitter leakage current (ICEO):100 μA
Emitter cut-off current (IEBO):200 μA
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = 1 A]0.6 V
[Collector current (Ic) = 1 A]0.6 V
Transition frequency (fT):3 MHz
DC current gain (hFE):40~250
chip material:Silicon
Remark:Complementary to BD942
Package:TO-220C
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