Transistor element query
Part Number:HY3210P
Part Type:N-Channel FET
Power Dissipation (PD):237 W
Drain current (ID):
[Case temperature (Tc) = 25 ℃]120 A
[Case temperature (Tc) = 25 ℃]120 A
Drain-source voltage (VDSS):100 V
Drain-source on resistance (RDS(on)):0.0085 Ω
Package:TO-220
More N-Channel FET17N80C3FSS2306(A6SHB)AOTF8N65IXFX26N120PCEB80N75HX2N60LNC16N65SVG086R0NDDHI0159LSD60R380HTKNH8150AIRFP264NIRFI630RU70100RIRF622