Transistor element query
Part Number:HY5608W
Part Type:N-Channel FET
Power Dissipation (PD):500 W
Drain current (ID):
[Case temperature (Tc) = 25 ℃]360 A
[Case temperature (Tc) = 25 ℃]360 A
Drain-source voltage (VDSS):80 V
Drain-source on resistance (RDS(on)):0.002 Ω
Package:TO-247
More N-Channel FETSTI20N65M52N6767DH32052SK26762SK2487SGW280N65W318N50IPD70R360P7S(70S360P7)LNN06R062NCE65R260DIRL40SC228IRFPS37N50ALNH05R230LNH045R2102SK786